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FDN335N

Fairchild Semiconductor
Part Number FDN335N
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDN335N April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V speci...
Datasheet PDF File FDN335N PDF File

FDN335N
FDN335N


Overview
FDN335N April 1999 FDN335N N-Channel 2.
5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.
5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • • • 1.
7 A, 20 V.
RDS(ON) = 0.
07 Ω @ VGS = 4.
5 V RDS(ON) = 0.
100 Ω @ VGS = 2.
5 V.
Low gate charge (3.
5nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
Applications • DC/DC converter • Load switch • D D S SuperSOT -3 TM G TA = 25°C unless otherwise noted G S Absolute...



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