MITSUBISHI SEMICONDUCTOR GaAs FET
FA01215
GaAs FET HYBRID IC
DESCRIPTION
FA01215 is RF Hybrid IC designed for 900MHz band small size handheld radio.
0.6 2 3.5 14.7 14.2 2 3.5 2
Unit:mm
FEATURES
Low voltage High gain High efficiency High power 3.0V 24dB(typ.) 50% 34.5dBm
6
APPLICATION
GSM IV
1
2
3
4
5
2.25
2.5
2.5
2.5
2.5 1.95
0.25±0.1...
