DatasheetsPDF.com

SGM2013N

Sony Corporation
Part Number SGM2013N
Manufacturer Sony Corporation
Description GaAs N-channel Dual-Gate MES FET
Published Apr 8, 2005
Detailed Description SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Descrip...
Datasheet PDF File SGM2013N PDF File

SGM2013N
SGM2013N

Overview
SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications including cellular/cordless phone.
Features • Ultra-small package • Low voltage operation • Low noise NF = 1.
4dB (Typ) at 900MHz, NF = 1.
7dB (Typ) at 1.
5GHz • High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.
5GHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier and mixer Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratin...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)