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IRF510

N-Channel Power MOSFET

Description

Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications su...

Fairchild Semiconductor

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