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IRF5806

International Rectifier
Part Number IRF5806
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 93997 IRF5806 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available i...
Datasheet PDF File IRF5806 PDF File

IRF5806
IRF5806

Overview
PD - 93997 IRF5806 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -20V RDS(on) max 86mΩ@VGS = -4.
5V 147mΩ@VGS = -2.
5V ID -4.
0A -3.
0A Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
D 1 6 A D D 2 5 D G 3 4 S T o p V ie w Micro6™ Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage J...


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