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IRF7101

International Rectifier
Part Number IRF7101
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description www.DataSheet4U.com PD - 9.871B IRF7101 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Du...
Datasheet PDF File IRF7101 PDF File

IRF7101
IRF7101

Overview
www.
DataSheet4U.
com PD - 9.
871B IRF7101 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 20V RDS(on) = 0.
10Ω ID = 3.
5A 3 6 4 5 Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space...


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