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IRF7103

International Rectifier
Part Number IRF7103
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1095B IRF7103 HEXFET® Power MOSFET l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Ch...
Datasheet PDF File IRF7103 PDF File

IRF7103
IRF7103

Overview
PD - 9.
1095B IRF7103 HEXFET® Power MOSFET l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 50V RDS(on) = 0.
130Ω ID = 3.
0A 3 6 4 5 Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.
8W is possible in a typical PCB mount application.
S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max.
3.
0 2.
3 10 2.
0 0.
016 ± 20 4.
5 -55 to + 150 Units A W W/°C V V/nS °C Thermal Resistance Ratings Parameter Rθ JA Maximum Junction-to-Ambient „ Min.
––– Typ.
––– Max.
62.
5 Units °C/W 8/25/97 IRF7103 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-S...


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