Power MOSFET
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PD - 9.1222
IRFI1310G
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature Description
Fourth Generation HEXFETs from International Rectifier utilize adv...
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