DatasheetsPDF.com

PF01410A

Part Number	PF01410A
Manufacturer	Hitachi Semiconductor
Description	MOS FET Power Amplifier Module for GSM Handy Phone
Published	Mar 22, 2005
Detailed Description	PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd. Edition November 1997...
Datasheet	PF01410A PDF File

Overview

PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd.
Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.
8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50 –30 to +100 –30 to +100 4 Unit V A V mW °C °C W PF01410A Electrical Characteristics (Tc = 25°C) Item Frequency range C...

Similar Datasheet

PF01410A MOS FET Power Amplifier Module for GSM Handy Phone - Hitachi Semiconductor
PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone - Hitachi Semiconductor
PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone - Hitachi Semiconductor
PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone - Hitachi Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)