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PF01411B

Hitachi Semiconductor
Part Number PF01411B
Manufacturer Hitachi Semiconductor
Description MOS FET Power Amplifier Module for E-GSM Handy Phone
Published Mar 22, 2005
Detailed Description PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov. 1997 Application • For ...
Datasheet PDF File PF01411B PDF File

PF01411B
PF01411B

Overview
PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov.
1997 Application • For E-GSM class4 880 to 915 MHz • For 3.
5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.
2cc High efficiency : 45% Typ at 35.
5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10 –30 to +100 –30 to +100 5 Unit V A V mW °C °C...


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