MOS FET Power Amplifier Module for E-GSM Handy Phone
Description
PF01412A
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-477B (Z) 3rd Edition February 1997 Application
For GSM class4 890 to 915 MHz For 5.5V nominal DC/DC converter use
Features
High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90...
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