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HAT2171H

Renesas Technology
Part Number HAT2171H
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Jan 31, 2007
Detailed Description HAT2171H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • ...
Datasheet PDF File HAT2171H PDF File

HAT2171H
HAT2171H

Overview
HAT2171H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.
8 mΩ typ.
(at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0131-0400 Rev.
4.
00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle...


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