Complementary Silicon Power Transistors
Description
2N3055(NPN), MJ2955(PNP)
Preferred Device
Complementary Silicon Power Transistors
Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.
Features
DC Current Gain − hFE = 20−70 @ IC = 4 Adc Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area ...
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