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MRF6V2150NR1

Freescale Semiconductor
Part Number MRF6V2150NR1
Manufacturer Freescale Semiconductor
Description RF Power FET
Published Jul 6, 2007
Detailed Description Freescale Semiconductor Technical Data RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs D...
Datasheet PDF File MRF6V2150NR1 PDF File

MRF6V2150NR1
MRF6V2150NR1


Overview
Freescale Semiconductor Technical Data RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25 dB Drain Efficiency — 68.
3% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capabl...



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