INSULATED GATE BIPOLAR TRANSISTOR
Description
www.DataSheet4U.com
PD - 96929
IRG4BC30FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
C
Fast CoPack IGBT
VCES = 600V
Features
Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IG...
Similar Datasheet
