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AP9980M

Advanced Power Electronics
Part Number AP9980M
Manufacturer Advanced Power Electronics
Description POWER MOSFET
Published May 2, 2008
Detailed Description AP9980M Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.com Mou...
Datasheet PDF File AP9980M PDF File

AP9980M
AP9980M

Overview
AP9980M Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface www.
DataSheet4U.
com Mount Package D1 G2 S2 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 80V 52mΩ 4.
6A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 80 ±20 4.
6 2.
9 30 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.
5 Unit ℃/W Data and specifications subject to change without notice 200107041 AP9980M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min.
80 1 - Typ.
0.
08 7 19 5 10 11 6 30 16 130 94 Max.
Units 52 60 3 1 25 ±100 30 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) www.
DataSheet4U.
com Static Drain-Source On-Resistance2 VGS=10V, ID=4.
6A VGS=4.
5V, ID=3.
6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS= ± 20V ID=4A VDS=64V VGS=4.
5V VDS=40V ID=1A RG=3.
3Ω,VGS=10V RD=40Ω VGS=0V VDS=25V f=1.
0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise...


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