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GT40Q323
Silicon N-Channel IGBT
Description
GT40Q323 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application www.datasheet4u.com Unit: mm Enhancement-mode High speed: tf = 0.14 μs (typ.) (IC = 40A) FRD included between emitter and collector 4th generation TO-3P (N) (Toshiba package name) Absolute Maximum Ratings (Ta = 25...
Toshiba Semiconductor
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