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GT40Q322
Silicon N-Channel IGBT
Description
GT40Q322 TOSHIBA Insulated Gate bipolar
Transistor
Silicon N Channel IGBT Preliminary www.datasheet4u.com GT40Q322 Unit: mm Voltage Resonance Inverter Switching Application Enhancement-mode High speed : tf = 0.14 µs (typ.) (IC = 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name) Maximum Ratings (T...
Toshiba Semiconductor
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