DatasheetsPDF.com

LET9006

STMicroelectronics
Part Number LET9006
Manufacturer STMicroelectronics
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Published Mar 22, 2005
Detailed Description LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERA...
Datasheet PDF File LET9006 PDF File

LET9006
LET9006

Overview
LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS PowerFLAT™(5x5) ORDER CODE LET9006 BRANDING 9006 DESCRIPTION The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 26 V in common source mode at frequencies up to 1 GHz.
LET9006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.
It is ideal for digital cellular BTS applications requiring high linearity.
PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max.
Operating Junction Temperature Storage Temperature Parameter Value 65 -0.
5 to +15 1 16 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 5 °C/W April, 15 2003 1/4 LET9006 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions ID = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 0.
5 A ID = 800 mA VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz TBD TBD TBD TBD 2.
0 Min.
65 1 1 5.
0 0.
9 µA µA V V mho pF pF pF Typ.
Max.
Unit DYNAMIC (f = 960 MHz) Symbol POUT(1) ηD (1) Test Conditions VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD POUT = 6 W POUT = 6 W Min.
7 55 Typ.
8 65 Max.
Unit W % Load mismatch IDQ = TBD VDD = 26 V ALL PHASE ANGLES 10:1 VSWR (1) 1 dB Compression point DYNAMIC (f = 920 - 960 MHz) Symbol...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)