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B1018A

Toshiba
Part Number B1018A
Manufacturer Toshiba
Description 2SB1018A
Published Sep 24, 2010
Detailed Description www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current...
Datasheet PDF File B1018A PDF File

B1018A
B1018A

Overview
www.
DataSheet4U.
com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • • • High collector current: IC = −7 A Low collector saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −4 A) Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −100 −80 −5 −7 −1 2.
0 30 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA...


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