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2SA1788

Part Number	2SA1788
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1788 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·...
Datasheet	2SA1788 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1788 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.
iscsemi.
com 1 isc&iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.
6A VBE(sat) Base-Emitter Satura...

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