DatasheetsPDF.com

2SA836

Hitachi Semiconductor
Part Number 2SA836
Manufacturer Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector ...
Datasheet PDF File 2SA836 PDF File

2SA836
2SA836

Overview
2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1.
Emitter 2.
Collector 3.
Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –55 –55 –5 –100 100 200 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –55 –5 — — 1 Typ — — — — — — –0.
1 –0.
66 200 2.
0 1 0.
5 Max — — — –100 –50 500 –0.
5 –0.
75 — — 5 1 Unit V V V nA nA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)