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2SB1605

Panasonic Semiconductor
Part Number 2SB1605
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification s Features...
Datasheet PDF File 2SB1605 PDF File

2SB1605
2SB1605

Overview
Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q q q Unit: mm 4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.
1±0.
2 8.
0±0.
2 Solder Dip s Absolute Maximum Ratings 15.
0±0.
3 3.
0±0.
2 13.
7–0.
2 +0.
5 V 1.
2±0.
15 1.
45±0.
15 0.
75±0.
1 2.
54±0.
2 5.
08±0.
4 2.
6±0.
1 0.
7±0.
1 emitter voltage 2SB1605A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1605 2SB1605A 2SB1605 2SB1605A 2SB1605 2SB1605A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –1A, IB1 = – 0.
1A, IB2 = 0.
1A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.
375A VCE = –10V, IC = – 0.
5A, f = 10MHz 30 0.
5 1.
2 0.
3 –60 –80 70 10 –1.
8 –1.
2 V V MHz µs µs µs 250 min typ max –200 –200 –300 –300 –1 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC — Ta 50 –6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat s...


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