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TGF2023-01

Part Number	TGF2023-01
Manufacturer	TriQuint Semiconductor
Description	6 Watt Discrete Power GaN on SiC HEMT
Published	Jul 1, 2012
Detailed Description	TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal ...
Datasheet	TGF2023-01 PDF File

Overview

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.
6 V Typical Technology: 0.
25 um Power GaN on SiC Chip Dimensions: 0.
82 x 0.
66 x 0.
10 mm Measured Performance Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.
6 V Typical Primary Applications • • www.
DataSheet.
net/ Defense & Aerospace Broadband Wireless Product Description The TriQuint TGF2023-01 is a discrete 1.
25 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-01 is designed using TriQuint’s proven 0.
25um GaN production process.
This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2023-01 typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz.
The maximum power added efficiency is 66% which makes the TGF2023-01 appropriate for high efficiency applications.
Lead-free and RoHS compliant .
Datasheet subject to change without notice.
TriQuint Semiconductor: www.
triquint.
com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.
com Apr 2011 © Rev D 1 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ Table I Absolute Maximum Ratings 1/ Symbol Vd Vg Vdg Id Ig Pin Tch 1/ Drain Voltage Gate Voltage Range Drain-Gate Voltage Drain Current Gate Current Input Continuous Wave Power Channel Temperature TGF2023-01 Notes 2/ Parameter Value 40 V -50 to 0 V 80 V 1.
25 A 7 mA 31 dBm 200 °C 2/ 2/ These ratings represent the maximum operable values for this device.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime.
These are stress ratings only, and functional operation of the device at these conditions is not implied.
Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation li...

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