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TTA0001

Toshiba Semiconductor
Part Number TTA0001
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Dec 9, 2012
Detailed Description TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications • High collector voltage: VCE...
Datasheet PDF File TTA0001 PDF File

TTA0001
TTA0001

Overview
TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications • High collector voltage: VCEO = －160 V (min.
) • Complementary to TTC0001 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
TTA0001 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse VCBO VCEO VEBO IC ICP IB PC Tj Tstg -160 V -160 V -5 V -18 A -35 A -9 A 150 W 150 °C −55 to 150 °C 1.
BASE 2.
COLLECTOR(HEAT SINK) 3.
EMITTER JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight : 4.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2009-01 1 2013-11-01 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = -160 V, IE = 0 VEB = -5 V, IC = 0 IC = -50 mA, IB = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -9 A IC = -9 A, IB = -0.
9 A VCE = -5 V, IC = -9 A VCE = -5 V, IC = -1 A VCB = -10 V, IE = 0, f = 1 MHz Marking TTA0001 Min Typ.
Max Unit ― ― -1.
0 μ...


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