DatasheetsPDF.com

BDV66

Inchange Semiconductor
Part Number BDV66
Manufacturer Inchange Semiconductor
Description Silicon PNP Darlington Power Transistor
Published Dec 10, 2012
Detailed Description isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Sa...
Datasheet PDF File BDV66 PDF File

BDV66
BDV66

Overview
isc Silicon PNP Darlington Power Transistor BDV66/A/B/C DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.
0V(Max.
)@ IC= -10A ·Complement to Type BDV67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDV66 -80 VCBO Collector-Base Voltage BDV66A -100 V BDV66B -120 BDV66C -140 BDV66 -60 VCEO Collector-Emitter Voltage BDV66A -80 V BDV66B -100 BDV66C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
5 A 175 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
625 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDV66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV66 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV66A BDV66B IC= -50mA ;IB=0 BDV66C VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA VBE(on) ICEO Base-Emitter On Voltage Collector Cutoff Current IC= -10A ; VCE= -3V VCE= 1/2VCEOmax; IB= 0 BDV66 VCB= -40V;IE= 0;TJ= 150℃ ICBO Collector Current Cutoff BDV66A BDV66B VCB= -50V;IE= 0;TJ= 150℃ VCB= -60V;IE= 0;TJ= 150℃ BDV66C VCB= -70V;IE= 0;TJ= 150℃ ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -10A ; VCE= -3V COB Output Capacitance IE= 0 ; VCB= -10V; ftest= 1MHz Switching times ton Turn-on Time toff Turn-off Time IC= -10A; IB1= -IB2= -40mA; VCC= 12V MIN TYP.
MAX UNIT -60 -80 V -1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)