MOS Field Effect Transistor
Description
SMD Type
MOS Field Effect Transistor 2SK3479
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Super low on-state resistance: RDS(on)1 = 11 m RDS(on)2 = 13 m MAX. (VGS = 10 V, ID = 42 A)
+0.2 8.7-0.2
MAX. (VGS = 4.5 V, ID = 42 A)
Low Ciss: Ciss = 11000 pF TYP. Built-in gate protection diode
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
...
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