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2SA1721

Part Number	2SA1721
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Plasma Display, Ni...
Datasheet	2SA1721 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications 2SA1721 Unit: mm • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.
5 V (max) • Small collector output capacitance: Cob = 5.
5 pF (typ.
) • Complementary to 2SC4497 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −300 V −300 V −5 V −100 mA −20 mA 150 mW 150 °C −55 to 150 °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause thi...

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