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2N3055

Microsemi Corporation
Part Number 2N3055
Manufacturer Microsemi Corporation
Description NPN POWER SILICON TRANSISTOR
Published Mar 23, 2005
Detailed Description TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices 2N3055 Qualified Level JAN JANTX MA...
Datasheet PDF File 2N3055 PDF File

2N3055
2N3055

Overview
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices 2N3055 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC Value 70 100 7.
0 7.
0 15 6.
0 117 -65 to +200 Max.
1.
5 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 34.
2 mW/0C for TA > +250C 2) Derate linearly @ 668 mW/0C for TC > +250C 0 TO-3* (TO-204AA) *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol V(BR)CEO V(BR)CER V(BR)CEX ICEO ICEX IEBO Min.
70 80 90 1.
0 1.
0 1.
0 Max.
Unit Vdc Vdc Vdc mAdc mAdc mAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBE ...


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