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2N3719

Microsemi Corporation
Part Number 2N3719
Manufacturer Microsemi Corporation
Description Silicon PNP Power Transistors
Published Mar 23, 2005
Detailed Description 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • ...
Datasheet PDF File 2N3719 PDF File

2N3719
2N3719


Overview
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • 2N3719 • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40 Vdc (Min) - 2N3719 DC Current Gain: hFE = 25-180 @ IC = 1.
0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.
75 Vdc @ IC = 1.
0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) • Silicon PNP Power Transistors • • DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.
This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.
They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices.
The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.
TO-5 VALUE 40 40 4.
0 10 3.
0 0.
5 -65 to 200 -65 to 200 6.
0 34.
3 1.
0 5.
71 29 175 ABSOLUTE MAXIMUM RATINGS: SYMBOL VCEO* VCB* VEB* IC* IC* IB* T STG* T J* PD* PD* θ CHARACTERISTIC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation TC = 25° C Derate above 25° C Total Device Dissipation T A = 25° C Derate above 25° C Thermal Resistance Junction to Case Junction to Ambient UNITS Vdc Vdc Vdc Adc Adc Adc °C °C Watts mW/° C Watts mW/° C ° C/W ° C/W JC * Indicates JEDEC registered Data.
MSC1026.
PDF 02-24-99 2N3719 ELECTRICAL CHARACTERISTICS: (25° Case Temperature Unless Otherwise Noted) SYMBOL VCEO(sus)* ICEX* ICBO...



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