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FDMC8884

Fairchild
Part Number FDMC8884
Manufacturer Fairchild
Description N-Channel Power Trench MOSFET
Published Mar 8, 2014
Detailed Description FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features ...
Datasheet PDF File FDMC8884 PDF File

FDMC8884
FDMC8884


Overview
FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.
0 A „ Max rDS(on) = 30 mΩ at VGS = 4.
5 V, ID = 7.
2 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application „ High side in DC - DC Buck Converters „ N...



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