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2SD2250

Silicon NPN Darlington Power Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) ·Complement to Type 2SB1490 ·Minimum Lot-to-Lot variations for robust device performance and reliable opera...

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