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K3798

Part Number	K3798
Manufacturer	Toshiba Semiconductor
Description	2SK3798
Published	May 15, 2014
Detailed Description	2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3798 Unit: mm Swit...
Datasheet	K3798 PDF File

Overview

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) www.
DataSheet4U.
com 2SK3798 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 2.
5Ω (ty p.
) High forward transfer admittance: |Yfs| = 2.
8 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Sy Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC ( Drain current Note 1) mbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 4 12 40 W 345 4 4.
0 150 -55~150 ° mJ A mJ °C C A 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) ...

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