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2SK3995

Part Number	2SK3995
Manufacturer	Panasonic
Description	Silicon N-Channel MOSFET
Published	Jul 16, 2014
Detailed Description	This product complies with the RoHS Directive (EU 2002/95/EC). Power er MOSFETs 2SK3995 Silicon N-channel enhancement ...
Datasheet	2SK3995 PDF File

Overview

This product complies with the RoHS Directive (EU 2002/95/EC).
Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP  Features  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive  Package  Code TO-220C-G1  Marking Symbol: K3995  Pin Name 1.
Gate 2.
Drain 3.
Source Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current *1 VDSS VGSS ID IDP Drain reverse current IDR Peak drain reverse current *1 IDRP Avalanche energy capability *2 Drain power dissipation Junction temperature Storage temperature EAS PD Tj TC = 25°C Ta = 25°C *3 Tstg  Ele...

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