Silicon N-Channel IGBT
Description
GT8G133
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G133
Strobe Flash Applications
Compact and Thin (TSSOP-8) package Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-e...
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