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GT8G136

Toshiba Semiconductor
Part Number GT8G136
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 3, 2014
Detailed Description GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • • • Compac...
Datasheet PDF File GT8G136 PDF File

GT8G136
GT8G136

Overview
GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • • • Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.
0V(min),Ta=70℃(max))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 ±6 ±8 150 1.
1 0.
6 150 −55~150 Unit V V Collector current Collector power dissipation（t＝10 s） Junction temperature Storage temperature range A W W °C °C 1,2 3 4 EMITTER EMITTER (Gate drive connection) GATE Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5,6,7,8 COLLECTOR JEDEC JEITA TOSHIBA Weight: 0.
035 g (typ.
) ― ― － Circuit Configuration 8 7 6 5 Thermal Characteristics Characteristics Thermal resistance , junction to ambient (t = 10 s) (Note2a) Thermal resistance , junction to ambient (t = 10 s) (Note2b) Symbol Rth (j-a) (1) Rth (j-a) (2) Rating 114 208 Unit °C/W °C/W Marking (Note 3) Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the Part No.
(or abbreviation code) next page.
5 6 7 8 1 2 3 4 8G136 4 3 2 1 Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2007-04-23 GT8G136 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collect...


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