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2SD2256

Silicon NPN Darlington Power Transistor

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE...

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