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GT40Q321

Toshiba Semiconductor
Part Number GT40Q321
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switchin...
Datasheet PDF File GT40Q321 PDF File

GT40Q321
GT40Q321

Overview
GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application · · · · · The 5th generation Enhancement-mode High speed : tf = 0.
41 µs (typ.
) (IC = 40A) Low saturation voltage: VCE (sat) = 2.
8 V (typ.
) (IC = 40A) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 23 42 80 10 80 68 170 150 −55 to 150 Unit V V A A A W W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1C Weight: 4.
6 g (typ.
) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.
74 1.
79 Unit °C/W °C/W Equivalent Circuit Collector Gate...


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