Silicon N-Channel MOSFET
Description
GT8G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G131
Strobe Flash Applications
Unit: mm
· · · · ·
Supplied in Compact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max)
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Toshiba Semiconductor
GT8G131 PDF File
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