Complementary Power Transistors
Description
MJE2955T, 3055T
Complementary Power Transistors
Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications.
Features:
Power dissipation-PD = 75W at TC = 25°C. DC current gain hFE = 20 (Minimum) at IC = 4.0A. VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base 2. Collector 3. Emitter...
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