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ME9926

Part Number	ME9926
Manufacturer	Aonetek Semiconductor
Description	Dual N-Channel High Density Trench MOSFET
Published	Jun 6, 2015
Detailed Description	Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-...
Datasheet	ME9926 PDF File

Overview

Aonetek Semiconductor Co.
, LTD.
Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 6.
0A 28 @ VGS = 4.
5V 20V 5.
2A 44 @ VGS = 2.
5V FEATURES ●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Ideal for Li ion battery pack application.
SOP-8 D1 D1 D2 D2 876 5 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit...

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