200V N-Channel MOSFET
Description
HFP640
July 2005
HFP640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ...
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