N-Channel Enhancement Mode Power MOSFET
Description
BLV297
N-channel Enhancement Mode Power MOSFET
Ease of Paralleling Fast Switching Simple Drive Requirements
BVDSS RDS(ON) ID
200V 2.0Ω 0.65A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit.
o Die size with scribe line Scribe line
o Die Thickness...
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