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BDV96

INCHANGE
Part Number BDV96
Manufacturer INCHANGE
Description Silicon PNP Power Transistor
Published Sep 21, 2015
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO...
Datasheet PDF File BDV96 PDF File

BDV96
BDV96

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCER Collector-Emitter Voltage BDV92 BDV94 BDV96 -60 -80 -100 VCEO Collector-Emitter Voltage BDV92 BDV94 BDV96 -60 -80 -100 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -10 ICM Collector Current-Peak -20 IB Base Current -7 IE Emitter Current -14 PC Collector Power Dissipation @ TC=25℃ 100 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
25 ℃/W ...


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