Power Field Effect Transistor
Description
IRF530
Product Preview TMOS E−FET.™ Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching appli...
ON Semiconductor
IRF530 PDF File
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