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KF4N60D

Part Number	KF4N60D
Manufacturer	KEC
Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published	Mar 23, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA KF4N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe M...
Datasheet	KF4N60D PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA KF4N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 600V, ID= 3.
2A Drain-Source ON Resistance : RDS(ON)=2.
5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery ...

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