N-Channel MOSFET
Description
HFS10N80
Dec 2010
HFS10N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 9.4 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON...
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