DatasheetsPDF.com

2SD2908

Part Number	2SD2908
Manufacturer	WEJ
Description	NPN EPITAXIAL SILICON TRANSISTOR
Published	Apr 8, 2016
Detailed Description	RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM:...
Datasheet	2SD2908 PDF File

Overview

RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.
5 W (Tamb=25℃) .
,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1.
BASE 2.
COLLECTOR 3.
EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain Collector-emitter saturation voltage ETransition frequency LCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob T...

Similar Datasheet

2SD2901 NPN Transistor - INCHANGE
2SD2908 Transistor - Jiangsu Changjiang Electronics
2SD2908 Transistor - GME
2SD2908 NPN EPITAXIAL SILICON TRANSISTOR - WEJ
2SD2908 Transistor - Bruckewell
2SD291 NPN Transistor - INCHANGE
2SD297 NPN Transistor - INCHANGE
2SD299 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)