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2SK3419

Renesas
Part Number 2SK3419
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Apr 8, 2016
Detailed Description 2SK3419 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V ...
Datasheet PDF File 2SK3419 PDF File

2SK3419
2SK3419

Overview
2SK3419 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.
3 mΩ typ.
• 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1099-0200 (Previous: ADE-208-942) Rev.
2.
00 Sep 07, 2005 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
2.
00 Sep 07, 2005 page 1 of 7 2SK3419 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at...


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