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Alpha & Omega Semiconductors |
AO4407A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady State Steady State Symbol RθJA RθJL Typ 32 60 17 Max 40 75 24 Units V V A mJ W °C Units °C/W °C/W °C/W Rev.11.0 June 2013 www.aosmd.com Electrical Characteristics (TJ=25° |
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Alpha & Omega Semiconductors |
30V N-Channel MOSFET TSTG Maximum 30 ±20 85 66 322 51 41 60 90 36 83 33 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Ty |
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Alpha & Omega Semiconductors |
30V P-Channel MOSFET -to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 30 60 3.5 Max 40 75 4.2 Units ° C/W ° C/W ° C/W Rev 4: Mar. 2011 www.aosmd.com Page 1 of 5 Datasheet pdf - http://w |
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Alpha & Omega Semiconductors |
N-Channel MOSFET The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (V |
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Alpha & Omega Semiconductors |
AOZ1051PI z 4.5 V to 18 V operating input voltage range z Synchronous Buck: 70 mΩ internal high-side switch and 40 mΩ internal low-side switch (at 12 V) z Up to 95 % efficiency z External soft start z Output voltage adjustable to 0.8 V z 3 A continuous output |
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Alpha & Omega Semiconductors |
AOZ3013PI 4.5 V to 18 V operating input voltage range 65 mΩ internal high-side switch and 36 mΩ internal low-side switch (at 12 V) Up to 95 % efficiency External soft start Output voltage adjustable to 0.8 V 3 A continuous output current 500 kHz |
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Alpha & Omega Semiconductors |
N-Channel MOSFET nits V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG TC=25° C 52 33 130 13.8 10.8 28 80 30 12 2.1 1.3 A A mJ W W ° C A Avalanche Energy L=0.1mH C Power Dissipation B TC=100° C TA=25° C TA=70° C Power D |
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ALPHA |
Potentiometer F 10K 31VA403-F 25K 31VA405-F 50K 31VA501-F 100K 31VA503-F 250K 31VA505-F 500K 31VA601-F 1M 31VA602-F 2M 31VA605-F 5M 31VC205-F 500 31VJ301-F 31VC301-F 1K 31VJ305-F 31VC302-F 2K 31VJ401-F 31VC303-F 2.5K 31VJ405-F 31VC305-F 5K 31VJ501-F 31VC401-F 10K |
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ALPHA & OMEGA |
AOZ3015PI 4.5 V to 18 V operating input voltage range Synchronous Buck: 85 mΩ internal high-side switch and 50 mΩ internal low-side switch (at 12 V) PEM (pulse energy mode) enables >85% efficiency with IOUT = 10 mA (VIN = 12 V, VOUT = 5 V) 350 µA suppl |
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Alpha & Omega Semiconductors |
30V Dual Asymmetric N-Channel MOSFET ent C Avalanche Energy L=0.01mH C IDSM IAS EAS 20 16 40 8 28 22 60 18 VDS Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=100°C PD 31 12 33 13 TA=25°C Power Dissipation A TA=70°C PDSM 3.6 2.3 4.3 2.7 Junction and Storage Tem |
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Alpha & Omega Semiconductors |
AOD478 =70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Sy |
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Alpha & Omega Semiconductors |
N-Channel MOSFET ximum 30 ±20 36 36 144 32.5 26 40 80 36 50 20 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State |
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Alpha & Omega Semiconductors |
Dual P-Channel MOSFET VDS (V) = -30V ID =-5.6A (VGS = 10V) RDS(ON) < 42mΩ (VGS = 10V) RDS(ON) < 52mΩ (VGS = 4.5V) RDS(ON) < 75mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 D2 G1 S1 G2 S2 www.DataSheet |
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Alpha & Omega Semiconductors |
N-Channel MOSFET VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous D |
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Alpha & Omega Semiconductors |
30V N-Channel MOSFET on B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 24 24 80 20 15 60 2 36 24 9.5 4.1 2.6 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol |
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Alpha & Omega Semiconductors |
30V N-Channel MOSFET 28 39 62 25 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 1.6 Max 40 75 2 D S Units V V A |
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Alpha & Omega Semiconductors |
30V Dual Asymmetric N-Channel MOSFET DM IDSM IAS EAS PD ±20 32 30 114 17.5 14 55 15 22 8.7 ±12 32 32 128 24 19 36 6 33 13 TA=25°C Power Dissipation A TA=70°C PDSM 2.9 1.9 3.4 2.2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Char |
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Alpha & Omega Semiconductors |
30V Dual Asymmetric N-Channel MOSFET Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=100°C PD 23 9 25 10 TA=25°C Power Dissipation A TA=70°C 2.5 PDSM 0.9 2.5 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ V W W °C Thermal Cha |
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Alpha & Omega Semiconductors |
30V Dual Asymmetric N-Channel MOSFET |
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Alpha & Omega Semiconductors |
30V P-Channel MOSFET age Temperature Range TJ, TSTG Maximum -30 ±25 -34 -32.5 -136 -21 -17 39 76 30 12 5 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D St |
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